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  semix ? 3 spt igbt modules semix 553gb128d semix 553gal128d semix 553gar128d preliminary data features  
     
   
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    !  % symbol conditions values units igbt   .'((  /     '+ 1( , +2( 31( $ / 45  !  .  6(( $  7 8'(   "9 -     :4$/:; <   2( === > .+( .'+ ,    $- . 
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    !  % symbol conditions min. typ. max. units igbt  7  7    - /   .' $ 2-+ + 6-+  /   7  (-      -  9  '+ .'+ , (-3 $  :  9  '+ .'+ , . (-a .-.+ .-(+     7  .+ -  9  '+ .'+ , 3 2-b 2 + c    / 
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  3(( $@  9  '+ .'+ , 3'2 $ h  %f%  +2(( $fi 26 i    7  .+  .b g thermal characteristics 4 9 !  /7j (-(6 kfl 4 9m !  /
"  m% (-.. kfl 4 9?m !  ?lm kfl 4   !  %  (-(2 kfl temperature sensor 4 '+    '+ , + 8+n )o j '+f1+ 4 ' 4 . p!qj.f ' .f . r @ qkr@j 32'( k mechanical data 5 f5     
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 56 3f'-+ + f+ ; '1a  semix 553gb128d ... 1 13-04-2006 ges ? by semikron
fig. 1 typ. output characteristic, inclusive r cc'+ ee' fig. 2 rated current vs. temperature i c = f (t c ) fig. 3 typ. turn-on /-off energy = f (i c ) fig. 4 typ. turn-on /-off energy = f (r g ) fig. 5 typ. transfer characteristic fig. 6 typ. gate charge characteristic semix 553gb128d ... 2 13-04-2006 ges ? by semikron
fig. 7 typ. switching times vs. i c fig. 8 typ. switching times vs. gate resistor r g fig. 9 transient thermal impedance of igbt fig. 10 transient thermal impedance of fwd fig. 11 typ. cal diode forward characteristic fig. 12 typ. cal diode peak reverse recovery current semix 553gb128d ... 3 13-04-2006 ges ? by semikron
fig. 13 typ. cal diode recovered charge  5s 3 7j  5s 3 this is an electrostatic discharge sensitive device (esds), international standard iec 60747-1, chapter ix. this technical information specifies semiconductor devices but promises no characteristics. no warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. semix 553gb128d ... 4 13-04-2006 ges ? by semikron


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